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| Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A (0.7) Unit: mm 6.90.1 (4.0) 2.50.1 (0.8) (1.0) 3.50.1 Features * High forward current transfer ratio hFE * Low collector-emitter saturation voltage VCE(sat) * Allowing supply with the radial taping 0.65 max. (0.85) Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 7 100 200 400 150 -55 to +150 Unit V V V mA mA mW C C 1 2 3 0.45+0.10 -0.05 2.50.5 14.50.5 1.050.05 2.50.5 0.45+0.10 -0.05 1: Emitter 2: Collector 3: Base MT-1-A1 Package Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO ICEO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA VCE = 2 V, IC = 100 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 160 90 0.1 150 3.5 0.3 V MHz pF Min 60 50 7 1 1 460 Typ Max Unit V V V A A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 160 to 260 R 210 to 340 S 290 to 460 No rank 160 to 460 Product of no-rank classification is not marked. (0.8) Publication date: April 2003 SJC00234BED 1 2SD1991A PC Ta 500 60 IC VCE Ta = 25C IB = 160 A 50 IB VBE 1 200 VCE = 10 V Ta = 25C 1 000 140 A Collector power dissipation PC (mW) Collector current IC (mA) 400 Base current IB (A) 40 120 A 100 A 800 300 30 80 A 20 60 A 40 A 10 20 A 600 200 400 100 200 0 0 0 40 80 120 160 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) IC VBE 200 VCE = 10 V 240 VCE = 10 V Ta = 25C 200 IC I B Collector-emitter saturation voltage VCE(sat) (V) 100 VCE(sat) IC IC / IB = 10 160 Collector current IC (mA) Collector current IC (mA) 10 160 120 25C Ta = 75C 80 -25C 120 1 80 0.1 25C 40 Ta = 75C -25C 40 0 0 0.4 0.8 1.2 1.6 2.0 0 0 200 400 600 800 1 000 0.01 0.1 1 10 100 Base-emitter voltage VBE (V) Base current IB (A) Collector current IC (mA) hFE IC 600 VCE = 10 V 1 000 hFE IC VCE = 5 V 300 fT I E VCB = 10 V Ta = 25C Forward current transfer ratio hFE 800 Transition frequency fT (MHz) 500 Forward current transfer ratio hFE 240 400 Ta = 75C 25C 600 Ta = 125C 75C 180 300 -25C 400 200 25C -25C 120 100 200 60 0 0.1 1 10 100 0 0.1 1 10 100 1 000 0 - 0.1 -1 -10 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) 2 SJC00234BED 2SD1991A Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 12 IE = 0 f = 1 MHz Ta = 25C NV IC 240 VCE = 10 V Ta = 25C Function = FLAT 100 h parameter IC VCE = 5 V f = 270 Hz 10 200 Noise voltage NV (mV) 8 160 Rg = 100 k 120 10 h Parameter 6 hfe (x 100) 4 80 22 k 40 4.7 k 1 hoe (10-1 S) hre (x 10-4) 2 hie (x 10 k) 0 1 10 100 0 10 100 1 000 1 0.1 1 10 Collector-base voltage VCB (V) Collector current IC (A) Collector current IC (mA) SJC00234BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL This datasheet has been download from: www..com Datasheets for electronics components. |
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